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| Datasheet File OCR Text: |
| AM0912-150 RF POWER TRANSISTOR PACKAGE - .400 X .500 2L FLG DESCRIPTION: The ASI AM0912-150 is a Common Base Transistor Designed for TCAS and JTIDS Pulse Power Amplifier Applications. FEATURES INCLUDE: * Gold Metallization * Hermetic Package * Input/Output Matching MAXIMUM RATINGS IC VCC PDISS TJ TSTG JC 16.5 A 35 V 300 W @ TC = 100 C -65 C to +250 C -65 C to +200 C 0.57 C/W CHARACTERISTICS SYMBOL BVCBO BVCES BVEBO ICES hFE POUT PG C IC = 60 mA TC = 25 C TEST CONDITIONS IC = 100 mA IE = 10 mA VCB = 35 V VCE = 5.0 V VCC = 35 V IC = 5.0 A f = 960 to 1215 MHz PIN = 26.7 W MINIMUM TYPICAL MAXIMUM 55 55 3.5 25 20 300 7.0 38 330 7.4 45 UNITS V V V mA --W dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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